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2SC5709. Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC5709.
Description  DC / DC Converter Applications
PDF  5 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5709. Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SA2043 / 2SC5709
No.6914-2/5
VR
RB
VCC=5V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=3A
For PNP, the polarity is reversed.
Specifications
( ) : 2SA2043
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)15
V
Collector-to-Emitter Voltage
VCEO
(--)15
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)10
A
Collector Current (Pulse)
ICP
(--)13
A
Base Current
IB
(--)1.2
A
Collector Dissipation
PC
1W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)12V, IE=0
(--)0.1
µA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
µA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)2V, IC=(--)500mA
(220)280
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(90)50
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)3A, IB=(--)60mA
(--110)120
(--170)180
mV
IC=(--)4.5A, IB=(--)90mA
(--160)180
(--240)280
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)3A, IB=(--)60mA
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10µA, IE=0
(--)15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10µA, IC=0
(--)5
V
Turn-On Time
ton
See specified test circuit.
30
ns
Storage Time
tstg
See specified test circuit.
(120)180
ns
Fall Time
tf
See specified test circuit.
(14)25
ns
Swicthing Time Test Circuit



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