MAC15FP Series MAC15AFP Series

3–64

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2

°C/W

Thermal Resistance, Case to Sink

R

θCS

2.2 (typ)

°C/W

Thermal Resistance, Junction to Ambient

R

θJA

60

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current (Either Direction) TJ = 25°C

(VD = Rated VDRM, TJ = 125°C, Gate Open)

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage (Either Direction)

(ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)

VTM

—

1.3

1.6

Volts

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

IGT

—

—

—

—

—

—

—

—

50

50

50

75

mA

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

VGT

—

—

—

—

0.2

0.2

0.9

0.9

1.1

1.4

—

—

2

2

2

2.5

—

—

Volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 200 mA)

IH

—

6

40

mA

Turn-On Time

(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,

Rise Time = 0.1

µs, Pulse Width = 2 µs)

tgt

—

1.5

—

µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,

Gate Unenergized, TC = 80°C)

dv/dt(c)

—

5

—

V/

µs

QUADRANT DEFINITIONS

QUADRANT II

QUADRANT I

QUADRANT III

QUADRANT IV

MT2(+)

MT2(–)

MT2(+), G(–)

MT2(+), G(+)

MT2(–), G(–)

MT2(–), G(+)

G(–)

G(+)

Trigger devices are recommended for gating on Triacs. They provide:

1. Consistent predictable turn-on points.

2. Simplified circuitry.

3. Fast turn-on time for cooler, more efficient and reliable operation.

ELECTRICAL CHARACTERISTICS of RECOMMENDED

BIDIRECTIONAL SWITCHES

Usage

General

Part Number

MBS4991

MBS4992

VS

6–10 V

7.5–9 V

IS

350

µA Max

120

µA Max

VS1–VS2

0.5 V Max

0.2 V Max

Temperature

Coefficient

0.02%/

°C Typ

1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the

voltage applied exceeds the rated blocking voltage.