HD6432138SW datasheet(811/1061 Pages) RENESAS

811 / 1061 page

Section 25 Electrical Characteristics

Rev. 4.00 Jun 06, 2006 page 757 of 1004

REJ09B0301-0400

Notes: 1. Set the times according to the program/erase algorithms.

2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash

memory control register (FLMCR1) is set. It does not include the programming

verification time.)

3. Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does

not include the erase verification time.)

4. Maximum programming time (tP (max))

tP (max) = (wait time after P-bit setting (z1) + (z3))

× 6 + wait time after P-bit setting (z2)

× ((N) – 6)

5. Maximum programming count (N) should be set according to the actual set value of (z1,

z2, z3) to allow programming within the maximum programming time (tP (max)). The

wait time after P-bit setting (z1, z2, z3) must be changed with the value of the number

of writing times (n) as follows.

The number of times for writing n

≤ n ≤ 6

z1 = 30 µs, z3 = 10 µs

≤ n ≤ 1000

z2 = 200 µs

6. Maximum erase time (tE (max))

tE (max) = Waiting time after E-bit setting (z)

× Maximum erase count (N).

7. Maximum erase count (N) should be set according to the actual setting (z) to allow

erase within the maximum erase time (tE (max)).

8. Minimum number of times for which all characteristics are guaranteed after rewriting

(Guarantee range is 1 to minimum value).

9. Reference value for 25

°C (as a guideline, rewriting should normally function up to this

value).

10. Data retention characteristic when rewriting is performed within the specification range,

including the minimum value.

HD6432138SW Datasheet(PDF) 811 Page - Renesas Technology Corp