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HD6432138SW Datasheet(PDF) 810 Page - Renesas Technology Corp |
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HD6432138SW Datasheet(HTML) 810 Page - Renesas Technology Corp |
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810 / 1061 page ![]() Section 25 Electrical Characteristics Rev. 4.00 Jun 06, 2006 page 756 of 1004 REJ09B0301-0400 25.3.6 Flash Memory Characteristics Table 25.27 shows the flash memory characteristics. Table 25.27 Flash Memory Characteristics (Programming/Erasing Operating Range) Conditions (5-V version): V CC = 4.0 V to 5.5 V, VSS = 0 V, Ta = –20 to +75°C (regular specifications), T a = –40 to +85°C (wide-range specifications) (3-V version): V CC = 3.0 V to 3.6 V, VSS = 0 V, Ta = –20 to +75°C Item Symbol Min Typ Max Unit Test Condition Programming time* 1 *2 *4 tP — 10 200 ms/ 128 bytes Erase time* 1 *3 *6 tE — 100 1200 ms/block Reprogramming count N WEC 100* 8 10000* 9 — Times Data retention time* 10 t DRP 10 —— Years Programming Wait time after SWE-bit setting* 1 x1 —— µs Wait time after PSU-bit setting* 1 y50 —— µs z1 28 30 32 µs 1 ≤ n ≤ 6 z2 198 200 202 µs 7 ≤ n ≤ 1000 Wait time after P-bit setting* 1 *4 z3 8 10 12 µs Additional writing Wait time after P-bit clear* 1 α 5 —— µs Wait time after PSU-bit clear* 1 β 5 —— µs Wait time after PV-bit setting* 1 γ 4 —— µs Wait time after dummy write* 1 ε 2 —— µs Wait time after PV-bit clear* 1 η 2 —— µs Wait time after SWE-bit clear* 1 θ 100 —— µs Maximum programming count* 1 *4 *5 N —— 1000 Times Erase Wait time after SWE-bit setting* 1 x1 —— µs Wait time after ESU-bit setting* 1 y 100 —— µs Wait time after E-bit setting* 1 *6 z10 — 100 ms Wait time after E-bit clear* 1 α 10 —— µs Wait time after ESU-bit clear* 1 β 10 —— µs Wait time after EV-bit setting* 1 γ 20 —— µs Wait time after dummy write* 1 ε 2 —— µs Wait time after EV-bit clear* 1 η 4 —— µs Wait time after SWE-bit clear* 1 θ 100 —— µs Maximum erase count* 1 *6 *7 N —— 120 Times |
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