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HD6432138SW Datasheet(PDF) 784 Page - Renesas Technology Corp |
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HD6432138SW Datasheet(HTML) 784 Page - Renesas Technology Corp |
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784 / 1061 page  Section 25 Electrical Characteristics Rev. 4.00 Jun 06, 2006 page 730 of 1004 REJ09B0301-0400 25.2.6 Flash Memory Characteristics Table 25.14 shows the flash memory characteristics. Table 25.14 Flash Memory Characteristics (Programming/Erasing Operating Range) Conditions (5-V version): V CC = 5.0 V ±10%, VSS = 0 V, Ta = 0 to +75°C (regular specifications), T a = 0 to +85°C (wide-range specifications) (3-V version): V CC = 3.0 V to 3.6 V, VSS = 0 V, Ta = 0 to +75°C Item Symbol Min Typ Max Unit Test Condition Programming time* 1 *2 *4 tP — 10 200 ms/32 bytes Erase time* 1 *3 *6 tE — 100 1200 ms/block Reprogramming count N WEC —— 100 Times Programming Wait time after SWE-bit setting* 1 x10 —— µs Wait time after PSU-bit setting* 1 y50 —— µs Wait time after P-bit setting* 1 *4 z 150 — 200 µs Wait time after P-bit clear* 1 α 10 —— µs Wait time after PSU-bit clear* 1 β 10 —— µs Wait time after PV-bit setting* 1 γ 4 —— µs Wait time after dummy write* 1 ε 2 —— µs Wait time after PV-bit clear* 1 η 4 —— µs Maximum programming count* 1 *4 *5 N —— 1000 Times z = 200 µs Erase Wait time after SWE-bit setting* 1 x10 —— µs Wait time after ESU-bit setting* 1 y 200 —— µs Wait time after E-bit setting* 1 *6 z5 — 10 ms Wait time after E-bit clear* 1 α 10 —— µs Wait time after ESU-bit clear* 1 β 10 —— µs Wait time after EV-bit setting* 1 γ 20 —— µs Wait time after dummy write* 1 ε 2 —— µs Wait time after EV-bit clear* 1 η 5 —— µs Maximum erase count* 1 *6 *7 N —— 120 Times z = 10 ms Notes: 1. Set the times according to the program/erase algorithms. 2. Programming time per 32 bytes (Shows the total period for which the P-bit in the flash memory control register (FLMCR1) is set. It does not include the programming verification time.) |
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