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GD32F310 Datasheet(PDF) 49 Page - GigaDevice Semiconductor (Beijing) Inc.

Part # GD32F310
Description  Arm® Cortex®-M4 32-bit MCU
PDF  81 Pages
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Manufacturer  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Direct Link  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD32F310 Datasheet(HTML) 49 Page - GigaDevice Semiconductor (Beijing) Inc.

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GD32F310xx Datasheet
48
4.5
Power supply supervisor characteristics
Table 4-11. Power supply supervisor characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VLVD(1)
Low Voltage Detector
Threshold
LVDT[2:0] = 000, rising edge
—
2.15
—
V
LVDT[2:0] = 000, falling edge
—
2.04
—
V
LVDT[2:0] = 001, rising edge
—
2.30
—
V
LVDT[2:0] = 001, falling edge
—
2.20
—
V
LVDT[2:0] = 010, rising edge
—
2.44
—
V
LVDT[2:0] = 010, falling edge
—
2.34
—
V
LVDT[2:0] = 011, rising edge
—
2.57
—
V
LVDT[2:0] = 011, falling edge
—
2.46
—
V
LVDT[2:0] = 100, rising edge
—
2.72
—
V
LVDT[2:0] = 100, falling edge
—
2.61
—
V
LVDT[2:0] = 101, rising edge
—
2.86
—
V
LVDT[2:0] = 101, falling edge
—
2.74
—
V
LVDT[2:0] = 110, rising edge
—
3.00
—
V
LVDT[2:0] = 110, falling edge
—
2.88
—
V
LVDT[2:0] = 111, rising edge
—
3.14
—
V
LVDT[2:0] = 111, falling edge
—
3.03
—
V
VLVDhyst(2)
LVD hysteresis
—
—
100
—
mV
VPOR(1)
Power on reset
threshold
—
—
2.38
—
V
VPDR(1)
Power down reset
threshold
—
1.84
—
V
VPDRhyst(2)
PDR hysteresis
—
600
—
mV
tRSTTEMPO(2)
Reset temporization
—
2
—
ms
(1)
Based on characterization, not tested in production.
(2)
Guaranteed by design, not tested in production.
4.6
Electrical sensitivity
The device is strained in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharges (ESD) are applied directly to the pins of the sample. Static latch-up



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