GD32F310 datasheet(47/81 Pages) GIGADEVICE

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GD32F310xx Datasheet

Peripherials(3)

Typical consumption(1)

Unit

GPIOD

0.10

GPIOC

0.13

GPIOB

0.13

GPIOA

0.13

APB2

TIMER16

0.24

TIMER15

0.24

TIMER14

0.31

USART0

0.41

TIMER0

0.50

SPI0

0.19

ADC(2)

0.91

APB1

PMU

0.31

I2C1

0.17

I2C0

0.17

USART1

0.15

SPI1

0.12

WWDGT

0.11

TIMER13

0.15

TIMER2

0.29

I2S0

0.17

(1)

Based on characterization, not tested in production.

(2)

System clock = fHCLK = 72 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, fADCCLK = fAPB2/2, ADCON bit is set to 1.

(3)

If there is no other description, then HXTAL = 8 MHz, System clock = fHCLK = 72 MHz, fAPB1 = fHCLK/2, fAPB2 =

fHCLK.

4.4

EMC characteristics

EMS (electromagnetic susceptibility) includes ESD (Electrostatic discharge, positive and

negative) and FTB (Burst of Fast Transient voltage, positive and negative) testing result is

given in Table 4-9. EMS characteristics(1), based on the EMS levels and classes compliant

with IEC 61000 series standard.

Table 4-9. EMS characteristics(1)

Symbol

Parameter

Conditions

Level/Class

VESD

Voltage applied to all device pins to

induce a functional disturbance

VDD = 3.3 V, TA = 25 °C,

LQFP48, fHCLK = 72 MHz

conforms to IEC 61000-4-2

VFTB

Fast transient voltage burst applied to

induce a functional disturbance through

100 pF on VDD and VSS pins

VDD = 3.3 V, TA = 25 °C,

LQFP48, fHCLK = 72 MHz

conforms to IEC 61000-4-4

(1)

Based on characterization, not tested in production.

EMI (Electromagnetic Interference) emission test result is given in the Table 4-10. EMI

GD32F310 Datasheet(PDF) 47 Page - GigaDevice Semiconductor (Beijing) Inc.

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