MJD112 datasheet(2/6 Pages) STMICROELECTRONICS

Part #	MJD112

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Rthj-amb

Thermal Resistance Ju nction- case

Max

Thermal Resistance Ju nction- amb ient

Max

6.25

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collecto r Cu t-of f

Current (IE =0)

VCB = 100 V

VCB =80 V

0.02

0.01

mA

ICEO

Collecto r Cu t-of f

Current (IB =0)

VCE = 50 V

0.02

mA

ICEX

Collecto r Cu t-of f

Current

VCB =80 V VBE = -1.5V

VCB =80 V VBE = -1.5V Tc = 125

oC

0.01

0. 5

mA

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

2

mA

VCEO(sus)

Collecto r-Emitter

Sustaining Voltage

IC = 30 mA

100

V

VCE(sat)

∗ Collector-Emitter

Satu ration Vo ltage

IC =2 A

IB =8 mA

IC =4 A

IB =40 mA

2

3

V

VBE(sat)

∗ Collector-Base

Satu ration Vo ltage

IC =4 A

IB =40 mA

4

V

VBE(on)

∗ Base-Emitter Voltage

IC =2 A

VCE =3 V

2. 8

V

hFE

∗

DC Current Gain

IC =0.5 A

VCE =3 V

IC =2 A

VCE =3 V

IC =4 A

VCE =3 V

500

100 0

200

120 00

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

Safe Operating Areas

Derating Curve

MJD112/MJD117

2/6

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