The MJD112 and MJD117 are complementary silicon power Darlington transistors manufactured using Epitaxial Base technology.
They are designed for low base-driver requirements and come in a surface-mounting TO-252 (DPAK) power package.
These transistors are suitable for general purpose switching and amplifier applications.
The electrical characteristics, absolute maximum ratings, and thermal data are provided, along with the internal schematic diagram and mechanical data.
The transistors are similar to the TIP112 and TIP117 and are part of the SGS-THOMSON preferred sales types.
The document also includes information on safe operating areas, DC current gain, collector-emitter saturation voltage, and base-emitter saturation voltage for both NPN and PNP types.
The publication is from SGS-THOMSON Microelectronics and includes a disclaimer about the accuracy and reliability of the information provided.