MJD112 datasheet(1/6 Pages) STMICROELECTRONICS

Part #	MJD112

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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MJD112

MJD117

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

LOW BASE-DRIVE REQUIREMENTS

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s

ELECTRICAL SIMILAR TO TIP112 AND

TIP117

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD112 and MJD117 form complementary

PNP - NPN pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

INTERNAL SCHEMATIC DIAGRAM

R1(typ) = 7K

Ω

R2(typ) = 200

Ω

September 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parame ter

Value

Unit

VCBO

Collector-Emitter Voltage (IE = 0)

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

100

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IC

Collector Current

2

A

ICM

Collector Peak Current (tp <5 ms)

4

A

IB

Base Current

0.05

A

Ptot

Tot al Dissipation at Tc =25

oC20

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Ope ra ting Ju nction Temperature

150

oC

For PNP type voltage and current values are negative.

1

3

DPAK

TO-252

(Suffix ”T4”)

1/6

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