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APM32E103CCU6-R Datasheet(PDF) 49 Page - Geehy Semiconductor Co., Ltd. |
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APM32E103CCU6-R Datasheet(HTML) 49 Page - Geehy Semiconductor Co., Ltd. |
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49 / 79 page ![]() www.g eeh y.co m Pag e 48 Parameter Peripheral Typical value (1) TA =25℃, VDD =3.3V Unit ADC3 0.28 TMR1 0.4 TMR8 0.4 SPI1 0.13 USART1 0.2 Note: It is obtained from a comprehensive evaluation and is not tested in production. 5.8. Wake-up time in low power mode The measurement of wake-up time in low power mode is from the start of wake-up event to the time when the user program reads the first instruction, in which VDD=VDDA. Table 33 Wake Up Time in Low-power Mode Symbol Parameter Conditions Min Typical value (TA=25 ℃) Max Unit 2V 3.3V 3.6V tWUSLEEP Wake-up from sleep mode - 0.52 0.61 0.60 0.57 0.65 μs tWUSTOP Wake up from stop mode The voltage regulator is in run mode 1.83 2.24 1.91 1.86 2.26 The voltage regulator is in low power mode 2.66 4.18 2.95 2.82 4.61 tWUSTDBY Wake up from standby mode - 59.56 76.40 63.74 61.29 84.56 Note: It is obtained from a comprehensive evaluation and is not tested in production. 5.9. Pin characteristics 5.9.1. I/O pin characteristics Table 34 DC Characteristics (test condition of VDD=2.7~3.6V, TA=-40~105 ℃) Symbol Parameter Conditions Minimum value Typical value Maximum value Unit VIL Low level input voltage CMOS port -0.5 - 0.35VDD V VIH High level input voltage 0.65VDD - VDD+0.5 VIL Low level input voltage TTL port -0.5 - 0.8 VIH High level input voltage, Standard I/O port 2 - VDD+0.5 High level input voltage, I/O FT port 2 5.5 Vhys Standard I/O Schmitt trigger voltage hysteresis - 200 - - mV I/O FT Schmitt trigger voltage hysteresis 5%VDD - - mV Ilkg Input leakage current VSS ≤ VIN ≤ VDD Standard I/O port - - ± 1 μA |
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