SL2S3003 datasheet(71/82 Pages) NXP

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NXP Semiconductors

SL2S3003/SL2S3003TT

ICODE 3 (TagTamper)

9 Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Tstg

storage temperature

-55

+125

°C

Ptot

total power dissipation

125

junction temperature

-40 [3] +105

°C

Ii(max)

maximum input current

LA to LB; peak

[4] -

±60

input current

LA to LB; RMS

Vind

maximum induced voltage (for SL2S3003TT

only)

0.5

VESD

electrostatic discharge voltage

human body model

(HBM) [5]

[6] -

±2

Table 136. Limiting values (Wafer)[1][2]

1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any conditions other than

those described in the operating conditions and electrical characteristics sections of this specification is not

implied.

2. This product includes circuitry specifically designed for the protection of its internal devices from the

damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be

taken to avoid applying greater than the rated maxima.

3. Under extreme conditions (negative temperatures and tag stays a long time at the maximum operating

range) the use of HF Resets is recommended.

4. The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to

parameter II).

5. According to ANSI/ESDA/JEDEC JS-001.

6. For ESD measurement, the IC was mounted in a SO28 package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

SL2S3003/SL2S3003TT

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3.0 — 28 March 2024

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