STM32L072KB datasheet(89/147 Pages) STMICROELECTRONICS

89 / 147 page

DocID027100 Rev 3

89/147

STM32L072xx

Electrical characteristics

117

6.3.10

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:



Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.



FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 55. They are based on the EMS levels and classes

defined in application note AN1709.

tRET(2)

Data retention (program memory) after

10 kcycles at TA = 85 °C

TRET = +85 °C

years

Data retention (EEPROM data memory)

after 100 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

TRET = +105 °C

Data retention (EEPROM data memory)

after 100 kcycles at TA = 105 °C

Data retention (program memory) after

200 cycles at TA = 125 °C

TRET = +125 °C

Data retention (EEPROM data memory)

after 2 kcycles at TA = 125 °C

1. Guaranteed by characterization results.

2. Characterization is done according to JEDEC JESD22-A117.

Table 54. Flash memory and data EEPROM endurance and retention (continued)

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Table 55. EMS characteristics

Symbol

Parameter

Conditions

Level/

Class

VFESD

Voltage limits to be applied on any I/O pin to

induce a functional disturbance

VDD 3.3 V, LQFP100, TA +25 °C, 

fHCLK 32 MHz

conforms to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD3.3 V, LQFP100, TA +25 °C, 

fHCLK 32 MHz

conforms to IEC 61000-4-4

STM32L072KB Datasheet(PDF) 89 Page - STMicroelectronics

STM32L072KB Datasheet(HTML) 89 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL