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BDT96 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDT96
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT96 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
BDT92/94/96
DESCRIPTION
·
DC Current Gain- hFE= 20~200@ IC= -4A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT92; -80V(Min)- BDT94;
-100V(Min)- BDT96
·
Complement to Type BDT91/93/95
APPLICATIONS
·
Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BDT92
-60
V
BDT94
-80
BDT96
-100
VCEO
Collector-Emitter Voltage
BDT92
-60
V
BDT94
-80
BDT96
-100
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-4
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.4
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
70
℃
/W


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