BDT96 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistor

BDT92/94/96

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDT92

IC= -30mA ; IB= 0

-60

BDT94

-80

BDT96

-100

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

-1

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -10A; IB= -3.3A

-3

VBE(on)

Base-Emitter On Voltage

IC= -4A; VCE= -4V

-1.6

ICBO

Collector Cutoff Current

VCB= VCBOmax; IE= 0

VCB=1/2VCBOmax; IE= 0,TJ=150℃

-0.1

-1

ICEO

Collector Cutoff Current

VCE= VCEOmax V; IB= 0

-0.2

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-0.1

hFE-1

DC Current Gain

IC= -4A ; VCE= -4V

200

hFE-2

DC Current Gain

IC= -10A ; VCE= -4V

Current-Gain—Bandwidth Product

IC= -500mA ; VCE= -10V

MHz

Switching times

ton

Turn-On Time

IC= -4A; IB1= -IB2= -0.4A

0.5

1.5

toff

Turn-Off Time

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