TSX562IYST datasheet(17/28 Pages) STMICROELECTRONICS

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DocID023274 Rev 4

17/28

TSX56x, TSX56xA

Application information

Equation 5

To evaluate the op-amp reliability, a follower stress condition is used where VCC is defined

as a function of the maximum operating voltage and the absolute maximum rating (as

recommended by JEDEC rules).

The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at

different measurement conditions (see Equation 6).

Equation 6

The long term drift parameter (ΔVio), estimating the reliability performance of the product, is

obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the

calculated number of months (Equation 7).

Equation 7

where Vio drift is the measured drift value in the specified test conditions after 1000 h stress

duration.

4.5

PCB layouts

For correct operation, it is advised to add 10 nF decoupling capacitors as close as possible

to the power supply pins.

4.6

Macromodel

Accurate macromodels of the TSX56x, TSX56xA devices are available on the

STMicroelectronics’ website at www.st.com. These models are a trade-off between

accuracy and complexity (that is, time simulation) of the TSX56x and TSX56xA operational

amplifiers. They emulate the nominal performance of a typical device within the specified

operating conditions mentioned in the datasheet. They also help to validate a design

approach and to select the right operational amplifier, but they do not replace on-board

measurements.

Months

AF 1000 h

12 months

24 h

365.25 days

()

⁄

VCC

maxVop with Vicm

VCC 2

⁄

ΔVio

Viodrift

months

()

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