TSX562IYST datasheet(10/28 Pages) STMICROELECTRONICS

10 / 28 page

Electrical characteristics

TSX56x, TSX56xA

10/28

DocID023274 Rev 4

AC performance

GBP

Gain bandwidth product

RL = 10 kΩ, CL = 100 pF

750

900

kHz

Unity gain frequency

750

Φm

Phase margin

Degree

Gain margin

Slew rate

RL = 10 kΩ, CL = 100 pF,

Vout = 0.5 V to VCC - 0.5 V

1.1

μs

∫ en

Low-frequency peak-to-peak

input noise

Bandwidth: f = 0.1 to 10 Hz

µVpp

Equivalent input noise voltage

density

f = 1 kHz

f = 10 kHz

THD+N

Total harmonic distortion +

noise

Follower configuration, fin = 1 kHz,

RL = 100 kΩ, Vicm = (VCC - 1.5 V)/2,

BW = 22 kHz, Vout = 5 Vpp

0.0005

1. See Section 4.3: Input offset voltage drift over temperature on page 15.

2. Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and

assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.

3. Guaranteed by design.

Table 6. Electrical characteristics at VCC+ = +16 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and

RL = 10 kΩ connected to VCC/2 (unless otherwise specified) (continued)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

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