IRF9358TRPBF. datasheet(3/8 Pages) IRF

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IRF9358PbF

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Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1

100

-VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

≤60μs PULSE WIDTH

Tj = 25°C

-2.5V

VGS

TOP

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM

-2.5V

0.1

100

-VDS, Drain-to-Source Voltage (V)

0.1

100

≤60μs PULSE WIDTH

Tj = 150°C

-2.5V

VGS

TOP

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM

-2.5V

-VGS, Gate-to-Source Voltage (V)

0.1

100

TJ = 25°C

TJ = 150°C

VDS = -15V

≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

ID = -9.2A

VGS = -10V

100

-VDS, Drain-to-Source Voltage (V)

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

102030

4050

QG Total Gate Charge (nC)

VDS= -24V

VDS= -15V

VDS= -6.0V

ID= -7.3A

IRF9358TRPBF. Datasheet(PDF) 3 Page - International Rectifier

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