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IRF9358TRPBF. Datasheet(PDF) 2 Page - International Rectifier |
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IRF9358TRPBF. Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF9358PbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. G D S Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) ––– 13.0 16.3 ––– 19.0 23.8 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -5.9 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 23 ––– ––– S Qg Total Gate Charge h ––– 19 ––– nC VDS = -15V, VGS = -4.5V, ID = - 7.3A Qg Total Gate Charge h ––– 38 ––– Qgs Gate-to-Source Charge h ––– 5.8 ––– Qgd Gate-to-Drain Charge h ––– 8.9 ––– RG Gate Resistance h ––– 15 ––– Ω td(on) Turn-On Delay Time ––– 5.7 ––– tr Rise Time ––– 7.2 ––– td(off) Turn-Off Delay Time ––– 146 ––– tf Fall Time ––– 69 ––– Ciss Input Capacitance ––– 1740 ––– Coss Output Capacitance ––– 360 ––– Crss Reverse Transfer Capacitance ––– 240 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 55 83 ns Qrr Reverse Recovery Charge ––– 35 53 nC Thermal Resistance Parameter Units RθJL Junction-to-Drain Lead g RθJA Junction-to-Ambient f Conditions See Figs. 19a &19b Max. 210 -7.3 ƒ = 1.0MHz VGS = 0V VDS = -25V VDS = -24V, VGS = 0V Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -10V, ID = -9.2A e VDS = VGS, ID = -25μA VGS = -4.5V, ID = -7.3A e m Ω μA TJ = 25°C, IF = -2.0A, VDD = -24V di/dt = 100A/μs e TJ = 25°C, IS = -2.0A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol ID = -7.3A RG = 6.8 Ω VDS = -10V, ID = -7.3A VDS = -24V, VGS = 0V, TJ = 125°C VDD = -15V, VGS = -4.5V e ID = -1.0A VDS = -15V VGS = -20V VGS = 20V VGS = -10V ns pF ––– Typ. ––– Static Drain-to-Source On-Resistance A ––– ––– ––– ––– -2.0 -73 nA nC °C/W Max. 20 62.5 Typ. ––– ––– |
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