RJK0328DPB-01_15 datasheet(2/7 Pages) RENESAS

2 / 7 page

RJK0328DPB-01

Preliminary

R07DS0264EJ0500 Rev.5.00

Page 2 of 6

Mar 01, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

0.1

A

VGS = 20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

A

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

VDS = 10 V, ID = 1 mA

RDS(on)

—

1.6

2.1



ID = 30 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

2.1

2.9



ID = 30 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

100

—

ID = 30 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

6380

—

Output capacitance

Coss

—

1150

—

Reverse transfer capacitance

Crss

—

330

—

VDS = 10 V, VGS = 0,

f = 1 MHz

Gate Resistance

—

0.7

—



Total gate charge

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

8.8

—

VDD = 10 V, VGS = 4.5 V,

ID = 60 A

Turn-on delay time

td(on)

—

9.4

—

Rise time

—

4.3

—

Turn-off delay time

td(off)

—

61.5

—

Fall time

—

7.3

—

VGS = 10 V, ID = 30 A,

VDD  10 V, RL = 0.33 ,

Rg = 4.7



Body–drain diode forward voltage

VDF

—

0.78

1.02

IF = 60 A, VGS = 0

Note4

Body–drain diode reverse recovery

time

trr

—

IF = 60 A, VGS = 0

diF/ dt = 100 A/ s

Body–drain diode reverse recovery

charge

Qrr

—

Notes: 4. Pulse test

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