RJK0328DPB-01_15 datasheet(1/7 Pages) RENESAS

Part #	RJK0328DPB-01

Description	Silicon N Channel Power MOS FET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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1 / 7 page

R07DS0264EJ0500 Rev.5.00

Page 1 of 6

Mar 01, 2011

Preliminary Datasheet

RJK0328DPB-01

Silicon N Channel Power MOS FET

Power Switching

Features

 High speed switching

 Capable of 4.5 V gate drive

 Low drive current

 High density mounting

 Low on-resistance

RDS(on) = 1.6 m typ. (at VGS = 10 V)

 Pb-free

 Halogen-free

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

G

D

SSS

4

1 23

5

1, 2, 3

Source

4

Gate

5

Drain

1 2

3 4

5

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

20

V

Drain current

ID

60

A

Drain peak current

ID(pulse)

Note1

240

A

Body-drain diode reverse drain current

IDR

60

A

Avalanche current

IAP

Note 2

30

A

Avalanche energy

EAR

Note 2

90

mJ

Channel dissipation

Pch

Note3

65

W

Channel to case thermal resistance

ch-c Note3

1.93

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tch = 25

C, Rg  50 

3. Tc = 25

C

R07DS0264EJ0500

(Previous: REJ03G1637-0400)

Rev.5.00

Mar 01, 2011

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