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IDT7143LA55PF Datasheet(PDF) 9 Page - Integrated Device Technology |
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IDT7143LA55PF Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 16 page  6.42 IDT7133SA/LA, IDT7143SA/LA High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges 9 AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage from the Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization but not production tested. 3. For MASTER/SLAVE combination, tWC = tBAA + tWR + tWP, since R/ W = VIL must occur after tBAA. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will very over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part number indicates power rating (SA or LA). Symbol Parameter 7133X20 7143X20 Com'l Only 7133X25 7143X25 Com'l, Ind & Military 7133X35 7143X35 Com'l, Ind & Military Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time(3) 20 ____ 25 ____ 35 ____ ns tEW Chip Enable to End-of-Write 15 ____ 20 ____ 25 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ 25 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 15 ____ 20 ____ 25 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 15 ____ 20 ____ ns tHZ Output High-Z Time(1,2) ____ 12 ____ 15 ____ 20 ns tDH Data Hold Time (4) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 12 ____ 15 ____ 20 ns tOW Output Active from End-of-Write (1,2,4) 0 ____ 0 ____ 0 ____ ns 2746 tbl 11a Symbol Parameter 7133X45 7143X45 Com'l & Military 7133X55 7143X55 Com'l, Ind & Military 7133X70/90 7143X70/90 Com'l & Military Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time(3) 45 ____ 55 ____ 70/90 ____ ns tEW Chip Enable to End-of-Write 30 ____ 40 ____ 50/50 ____ ns tAW Address Valid to End-of-Write 30 ____ 40 ____ 50/50 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0/0 ____ ns tWP Write Pulse Width 30 ____ 40 ____ 50/50 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0/0 ____ ns tDW Data Valid to End-of-Write 20 ____ 25 ____ 30/30 ____ ns tHZ Output High-Z Time(1,2) ____ 20 ____ 20 ____ 25/25 ns tDH Data Hold Time (4) 5 ____ 5 ____ 5/5 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 20 ____ 20 ____ 25/25 ns tOW Output Active from End-of-Write (1,2,4) 5 ____ 5 ____ 5/5 ____ ns 2746 tbl 11b |
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