| Electronic Components Datasheet Search |
|
STM32F373C8 Datasheet(PDF) 79 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32F373C8 Datasheet(HTML) 79 Page - STMicroelectronics |
|
79 / 131 page ![]() DocID022691 Rev 4 79/131 STM32F37xxx Electrical characteristics 114 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 45. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA = –40 to +105 °C 40 53.5 60 µs tERASE Page (2 kB) erase time TA = –40 to +105 °C 20 - 40 ms tME Mass erase time TA = –40 to +105 °C 20 - 40 ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Table 46. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Data based on characterization results, not tested in production. NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycles(2) at TA = 55 °C 20 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |