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RN2108ACT Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN2108ACT Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() RN2107ACT~RN2109ACT 2010-04-06 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 Collector cut-off current RN2107ACT to 2109ACT ICEO VCE = −50 V, IB = 0 ⎯ ⎯ −500 nA RN2107ACT VEB = −6 V, IC = 0 −0.088 ⎯ −0.131 RN2108ACT VEB = −7 V, IC = 0 −0.085 ⎯ −0.126 Emitter cut-off current RN2109ACT IEBO VEB = −15 V, IC = 0 −0.182 ⎯ −0.271 mA RN2107ACT 80 ⎯ ⎯ RN2108ACT 80 ⎯ ⎯ DC current gain RN2109ACT hFE VCE = −5 V, IC = −10 mA 70 ⎯ ⎯ ⎯ Collector-emitter saturation voltage RN2107ACT to 2109ACT VCE (sat) IC = −5 mA, IB = −0.25 mA ⎯ ⎯ −0.15 V RN2107ACT −0.8 ⎯ −1.8 RN2108ACT −1.0 ⎯ −3.0 Input voltage (ON) RN2109ACT VI (ON) VCE = −0.2 V, IC = −5 mA −2.0 ⎯ −6.4 V RN2107ACT −0.6 ⎯ −0.9 RN2108ACT −0.7 ⎯ −1.2 Input voltage (OFF) RN2109ACT VI (OFF) VCE = −5 V, IC = −0.1 mA, −1.5 ⎯ −2.6 V Collector output capacitance RN2107ACT to 2109ACT Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 0.9 ⎯ pF RN2107ACT 8 10 12 RN2108ACT 17.6 22 26.4 Input resistor RN2109ACT R1 ⎯ 37.6 47 56.4 k Ω RN2107ACT 0.17 0.213 0.255 RN2108ACT 0.374 0.468 0.562 Resistor ratio RN2109ACT R1/R2 ⎯ 1.71 2.14 2.56 ⎯ |
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