TPS54353MPWPREP datasheet(6/35 Pages) TI1

6 / 35 page

TPS54352-EP

,, TPS54353-EP,, TPS54354-EP

TPS54355-EP

, TPS54356-EP, TPS54357-EP

SLVS684A – JANUARY 2007 – REVISED JULY 2009 ....................................................................................................................................................... www.ti.com

Electrical Characteristics (continued)

TJ = –55°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Current Limit

Current limit

VIN = 12 V

3.3

4.5

6.5

Current-limit hiccup time(2)

fs = 500 kHz

4.5

Thermal Shutdown

Thermal-shutdown trip point(2)

165

°C

Thermal-shutdown hysteresis(2)

°C

Low-Side MOSFET Driver (LSG)

Turn-on rise time, (10/90%)(2)

VIN = 4.5 V, Capacitive load = 1000 pF

Deadtime

VIN = 12 V

VIN = 4.5 V sink/source

7.5

Driver ON resistance

Ω

VIN = 12 V sink/source

Output Power MOSFETS (PH)

Phase-node voltage when disabled

DC coinditions and no load, ENA = 0 V

0.5

VIN = 4.5 V, Idc = 100 mA

1.13

1.42

Voltage drop, low-side FET and diode

VIN = 12 V, Idc = 100 mA

1.08

1.38

VIN = 4.5 V, BOOT-PH = 4.5 V, IO = 0.5 A

150

300

rDS(ON)

High-side power MOSFET switch(3)

Ω

VIN = 12 V, BOOT-PH = 8V, IO = 0.5 A

100

200

(2)

Specified by design, not production tested

(3)

Resistance from VIN to PH pins

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