SE2522L-R datasheet(4/8 Pages) SIGE

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SE2522L

RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC

Preliminary Information

AC Electrical Characteristics

Conditions: V

CC0 = VCC1 = VCC2 = VEN = 3.3V, VCTL = 1.6V, TA = 25°C, f = 2.45GHz, using IEEE802.11b modulation,

and SiGe Semiconductor SE2522L-EK1 Evaluation Kit otherwise noted.

Symbol

Parameter

Note

Min.

Typ.

Max.

Unit

L-U

Frequency Range

2400

2485

MHz

Output Power @ PIN =-7dBm, VCTL =1.6V,

ACPR < -30dBc

dBm

Output Power @ PIN =-7dBm, VCTL = 0.1V,

ACPR < -30dBc

-5

dBm

OUT

Output Power (sat) @ PIN = +2dBm,

VCTL = 1.6V

dBm

dPOUT

/dVCTL

Control Voltage Sensitivity

dB/V

Gain, small signal

VAR

Gain Variation over band (2400-2485MHz)

1.0

2.0

2f,3f,4f,5f

Harmonics

-50

dBc

IS21 IOFF

Isolation in “OFF” State, P

IN <= +2dBm,

VEN =0V

IS12I

Reverse Isolation

Rise and Fall Time 10% to 90%

1.2

µs

STAB

Stability (PIN <= +2dBm, Load VSWR = 6:1)

All non-harmonically related outputs less than

-50 dBc/100kHz

PDR

Power detect range, peak power

dBm

PDT

PA power detect, response time, 5pF load

0.1

µsec

PDVmax

PA power detect, output voltage maximum,

load > 5kOhms

1.8

PDVmin

PA power detect, output voltage minimum,

load > 5kOhms

0.2

PDVp19

PA power detect output voltage,

POUT = 13dBm peak

0.8

PDVap19

PA power detect output voltage accuracy,

POUT = 19dBm peak

±35

Notes: (1) Harmonic levels and ACPR are greatly affected by topology of external matching networks.

(2) Parameter measured with RF modulation based on IEEE 802.11b standard and matching networks

optimized for linear output power performance

(3) With matching networks optimized for saturated output power performance

(4) Measured at VDET pin

18-DST-01 Rev 2.4 Aug 7/02

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SE2522L-R Datasheet(PDF) 4 Page - SiGe Semiconductor, Inc.

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