SE2522L-R datasheet(3/8 Pages) SIGE

3 / 8 page

SE2522L

RangeCharger™ 2.4 GHz Power Amplifier And Power Detector IC

Preliminary Information

Absolute Maximum Ratings

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage

to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions

defined below. This device is ESD sensitive with an ESD rating of < 600V. Handling and assembly of this device

should be at ESD protected workstations.

Symbol

Parameter

Min.

Max.

Unit

VCC

Supply Voltage

-0.3

+3.6

VCTL

Control Voltage

-0.3

VCC

VEN

Ramping Voltage

-0.3

VCC

RF Input Power

dBm

TSTG

Storage Temperature Range

-40

+150

°C

Maximum Junction Temperature

+150

°C

Recommended Operating Conditions

Symbol

Parameter

Min.

Typ.

Max.

Unit

Operating Temperature

-40

+85

°C

VCC

Supply Voltage

2.7

3.3

3.6

DC Electrical Characteristics

Conditions: V

CC0=VCC1=VCC2=VEN=3.3V, VCTL=1.6V, TA =25°C, f =2.45GHz, using IEEE802.11b modulation, Input and

Output externally matched to 5

0Ω, unless otherwise noted.

Symbol

Parameter

Min.

Typ.

Max.

Unit

ICC

Supply Current, VCTL = 1.6V, PIN = -7dBm

110

130

ICC(sat)

Supply Current (sat) @ PIN = +2dBm

140

175

VCTL

PA Output Power Control Voltage Range

0.1

1.6

ICTL

Current sunk by VCTL Pin

100

µA

Logic High Voltage

2.0

VEN

Logic Low Voltage

0.8

ISTBY

Leakage Current when VEN = 0V, VCTL = 0V

0.1

200

µA

18-DST-01 Rev 2.4 Aug 7/02

3 of 8

SE2522L-R Datasheet(PDF) 3 Page - SiGe Semiconductor, Inc.

SE2522L-R Datasheet(HTML) 3 Page - SiGe Semiconductor, Inc.

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL