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BD751 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD751 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A ·High Power Dissipation ·Complement to Type BD750/750A APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751 100 VCEV Collector-Emitter Voltage BD751A 130 V BD751 90 VCEO(SUS) Collector-Emitter Voltage BD751A 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn |
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