RZF013P01

Data Sheet

2/5

www.rohm.com

○

c

2009 ROHM Co., Ltd. All rights reserved.

2009.02 - Rev.A

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−±10

−6V

−12

−−

−−

−1

−0.3

−−1.0

V

−

190

260

−

280

390

m

Ω

m

Ω

m

Ω

−

400

600

m

Ω

−

530

1060

1.4

−−

−

290

−

pF

−6V

−

28

21

−

pF

−

8

−

pF

f=1MHz

−

10

−

ns

−

30

−

ns

−

9

−

ns

−

2.4

−

ns

−

0.6

−

nC

−

0.4

−

nC

−4.5V

4.6

Ω

Ω

−−

nC

−1.3A

−6V

−0.6A

−4.5V

10

Ω

Ω

Body diode characteristics (Source -drain) (Ta=25

°C)

−−

−1.2

V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗Pulsed

∗