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2010.08 - Rev.C

General purpose transistors(dual transistors)

EMT18 / UMT18N / IMT18



Features



Dimensions (Unit : mm)

1) Two 2SA2018 chips in a EMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.



Structure

Epitaxial planar type

PNP silicon transistor



Inner circuit

(3)

(4)

(2)

(5)

(1)

(6)

EMT18 / UMT18N

(4)

(3)

(5)

(2)

(6)

(1)

IMT18



Absolute maximum ratings (Ta=25

C)

Collector-base voltage

Collector-emitter voltage

Power dissipation

Storage temperature

Emitter-base voltage

Collector current

Junction temperature

∗2 120mW per element must not be exceeded.

∗3 200mW per element must not be exceeded.

Parameter

Symbol

Tstg

Limits

−15

−12

150 (TOTAL)

−55 to +150

Unit

V

V

mW

°C

°C

−6

−500

∗1

∗3

∗2

V

mA

1.0

A

Tj

150

SMT6 300 (TOTAL)

EMT6

UMT6

ROHM : EMT6

Each lead has same dimensions

Abbreviated symbol : T18

EMT18

ROHM : SMT6

EIAJ : SC-74

JEDEC : SOT-457

Each lead has same dimensions

Abbreviated symbol : T18

IMT18

ROHM : UMT6

EIAJ : SC-88

Each lead has same dimensions

Abbreviated symbol : T18

UMT18N