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2SD1616AG-X-AB3-R Datasheet(PDF) 4 Page - Unisonic Technologies

Part # 2SD1616AG-X-AB3-R
Description  NPN EPITAXIAL SILICON TRANSISTOR
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1616AG-X-AB3-R Datasheet(HTML) 4 Page - Unisonic Technologies

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2SD1616/A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R201-008.D
TYPICAL CHARACTERISTICS(Cont.)
DC Current Gain
Collector Current, IC (A)
0.01
50
300
1000
10
10
500
100
30
5
3
1
0.03 0.05 0.1
0.3 0.5
1
3 5
VCE=2V
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Current, IC (A)
0.01
10
0.1
10
1
0.03 0.05 0.1
0.3 0.5
1
3 5
IC=20IB
0.03
0.05
0.3
0.5
3
5
VCE (SAT)
VBE (SAT)
20
0m
s
D
C
U T C assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all U T C products described or contained
herein. U T C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.


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