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2SD1616AG-X-AB3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SD1616AG-X-AB3-R
Description  NPN EPITAXIAL SILICON TRANSISTOR
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1616AG-X-AB3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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2SD1616/A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-008.D
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
2SD1616
60
Collector to Base Voltage
2SD1616A
VCBO
120
V
2SD1616
50
Collector to Emitter Voltage
2SD1616A
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
DC
IC
1
A
Collector Current
Pulse(Note2)
ICM
2
A
Total Power Dissipation
PC
750
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width
≤10ms, Duty cycle<50%
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=1A, IB=50mA
0.15
0.3
V
Base-Emitter Saturation Voltage
VBE (SAT)
IC=1A, IB=50mA
0.9
1.2
V
Base Emitter On Voltage
VBE (ON)
VCE =2V, IC =50mA
600
640
700
mV
Collector Cut-Off Current
ICBO
VCB=60V
100
nA
Emitter Cut-Off Current
IEBO
VEB= 6V
100
nA
2SD1616
135
600
hFE1
VCE =2V, IC =100mA
2SD1616A
135
400
DC Current Gain
hFE2
VCE =2V, IC=1A
81
Transition Frequency
fT
VCE =2V, IC =100mA
100
160
MHz
Output Capacitance
Cob
VCB =10V, f =1MHz
19
pF
Turn On Time
tON
VCE =10V, IC =100mA
0.07
μs
Storage Time
tSTG
IB1 = -IB2 =10mA
0.95
μs
Fall Time
tF
VBE(OFF) = -2 ~ -3V
0.07
μs
CLASSIFICATION OF hFE1
RANK
Y
G
L
hFE1
135 ~ 270
200 ~ 400
300 ~ 600


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