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MPC5601DXLL Datasheet(PDF) 41 Page - Freescale Semiconductor, Inc |
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MPC5601DXLL Datasheet(HTML) 41 Page - Freescale Semiconductor, Inc |
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41 / 77 page  Electrical characteristics MPC5602D Microcontroller Data Sheet, Rev. 3.1 Preliminary—Subject to Change Without Notice Freescale Semiconductor 41 Table 23. Program and erase specifications (Code Flash) Symbol C Parameter Value Unit Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change pending device characterization. Initial max2 2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage. Max3 3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values are characterized but not guaranteed. Tdwprogram CC C Double word (64 bits) program time4 4 Actual hardware programming times. This does not include software overhead. — 22 50 500 µs T16KpperaseC 16 KB block preprogram and erase time — 300 500 5000 ms T32KpperaseC 32 KB block preprogram and erase time — 400 600 5000 ms T128KpperaseC 128 KB block preprogram and erase time — 800 1300 7500 ms Tesus Erase suspend latency TBD TBD TBD TBD µs Table 24. Program and erase specifications (Data Flash) Symbol C Parameter Value Unit Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change pending device characterization. Initial max2 2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage. Max3 3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values are characterized but not guaranteed. Tswprogram CC C Single word (32 bits) program time 4 4 Actual hardware programming times. This does not include software overhead. —30 70 300 µs T16Kpperase 16 KB block preprogram and erase time — 700 800 1500 ms TBank_D 64 KB block preprogram and erase time — 1900 2300 4800 ms |
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