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SEMICONDUCTOR

TECHNICAL DATA

BAS21

SILICON EPITAXIAL PLANAR DIODE

Revision No : 1

High Voltage Switching.

FEATURES

・High Reliability.

・Small surface mounting type (SOT-23).

MAXIMUM RATING (Ta=25℃)

DIM

MILLIMETERS

1. NC

2. ANODE

3. CATHODE

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P

7

2

1

3

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Maximum (Peak) Reverse Voltage

300

V

Reverse Voltage

250

V

Continuous Forward Current

250

mA

Surge Current (10mS)

2

A

Power Dissipation

250*

mW

300**

Junction Temperature

150

℃

Storage Temperature Range

-55～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

-

-

1.25

V

Reverse Current

-

-

0.2

μA

-

-

100

Total Capacitance

-

-

3

pF

Reverse Recovery Time

-

-

100

nS

Type Name

Marking

Lot No.

H 9

* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)

** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm)