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STTH3R04Q Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH3R04Q Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() STTH3R04 Characteristics 5/10 Figure 11. Relative variations of dynamic parameters versus junction temperature Figure 12. Transient peak forward voltage versus dIF/dt (typical values) Figure 13. Forward recovery time versus dIF/dt (typical values) Figure 14. Thermal resistance versus lead length, DO-15 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead, DO-201AD (epoxy FR4, copper thickness = 35 µm) Figure 16. Thermal resistance versus lead length, DO-201AD 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Q RR;IRM [Tj]/ QRR;IRM [Tj=125°C] I RM Q RR I F= 3 A V R=320 V Tj(°C) 0 5 10 15 20 25 0 50 100 150 200 250 300 350 400 450 500 V Fp(V) I F=3 A T j=125 °C dIF/dt(A/µs) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 400 450 500 t FR(ns) I F=3 A T j=125 °C dIF/dt(A/µs) 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R th(j-a)(°C/W) DO-15 Lleads(mm) 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R th(j-a)(°C/W) DO-201AD SCu(cm²) 0 10 20 30 40 50 60 70 80 90 100 5 1015 2025 R th(°C/W) DO-201AD Rth(j-a) Rth(j-l) Lleads(mm) |
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