STBV68 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	STBV68

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 4 page

THERMAL DATA

Rthj-amb

Thermal Resistance Junction-ambient

Max

140

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5 V)

VCE = 600 V

250

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VBE = 9 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 1 mA

L = 25mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.1 A

IB = 20 mA

IC = 0.15 A

IB = 50 mA

IC = 0.25 A

IB = 100 mA

0.35

0.8

3.0

0.75

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.1 A

IB = 20 mA

IC = 0.15 A

IB = 50 mA

1.0

1.2

hFE

∗

DC Current Gain

IC = 0.1 A

VCE = 5 V

IC = 0.25 A

VCE = 10 V

INDUCTIVE LOAD

Fall Time

IC = 0.1 A

Vclamp = 300 V

IB1 = - IB2 = 20 mA

L =3 mH

0.3

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

STBV68

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