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STR730FZ2T6 Datasheet(PDF) 38 Page - STMicroelectronics |
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STR730FZ2T6 Datasheet(HTML) 38 Page - STMicroelectronics |
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38 / 52 page ![]() Electrical parameters STR73xFxx 38/52 4.3.5 I/O port pin characteristics General characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. 1. Data based on characterization results, not tested in production. 2. When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise refer to IINJ(PIN) specification. A positive injection is induced by VIN>V33 while a negative injection is induced by VIN<VSS. Refer to Section 4.2 on page 22 for more details. 3. Leakage could be higher than max. if negative current is injected on adjacent pins. 4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor. Data based on design simulation and/or technology characteristics, not tested in production. 6. The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor (corresponding IPU and IPD current characteristics described in Figure 19). Table 23. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage 1) TTL ports 0.8 V VIH Input high level voltage 1) 2.0 IINJ(PIN) Injected current on any I/O pin ±10 mA ΣI INJ(PIN) 2) Total injected current (sum of all I/O and control pins) ±75 mA Ilkg Input leakage current 3) VSS≤VIN≤VDD ±1 μA IS Static current consumption 4) Floating input mode 200 µA RPU Weak pull-up equivalent resistor5) VIN=VSS 55 120 220 k Ω RPD Weak pull-down equivalent resistor5) VIN=VDD 55 120 220 k Ω CIO I/O pin capacitance 5 pF |
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