M24512-R datasheet(22/35 Pages) STMICROELECTRONICS

22 / 35 page

DC and AC parameters

M24512-x, M24256-Bx

22/35

Table 10.

Input parameters

Symbol

Parameter(1)

Sampled only, not 100% tested.

Test condition

Min.

Max.

Unit

CIN

Input capacitance (SDA)

CIN

Input capacitance (other pins)

(2)

E2,E1,E0: Input impedance when the memory is selected (after a Start condition).

Input impedance

(E2, E1, E0, WC)

VIN < 0.3VCC

Ω

(2)

Input impedance

(E2, E1, E0, WC)

VIN > 0.7VCC

500

Ω

Table 11.

DC characteristics (M24xxx-W)

Symbol

Parameter

Test conditions (see Table 7 and

Table 9)

Min.

Max.

Unit

ILI

Input leakage current

(SCL, SDA, E0, E1, E2)

VIN = VSS or VCC

device in Standby mode

± 2

µA

ILO

Output leakage current

SDA in Hi-Z, external voltage applied

on SDA: VSS or VCC

± 2

µA

ICC

Supply current (Read)

VCC = 2.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

1mA

VCC = 5.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

2mA

ICC0

Supply current (Write)

During tW, 2.5 V < VCC < 5.5 V

5(1)

Characterized value, not tested in production.

ICC1

Standby supply current

VIN = VSS or VCC,

VCC = 2.5 V

Device grade 3

µA

VIN = VSS or VCC,

VCC = 2.5 V

Device grade 6

VIN = VSS or VCC, VCC = 5.5 V

µA

VIL

Input low voltage

(SCL, SDA, WC)

–0.45

0.3VCC

VIH

Input high voltage

(SCL, SDA, WC)

0.7VCC VCC+0.6

VOL

Output low voltage

IOL = 2.1 mA, VCC = 2.5 V

0.4

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