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GS8331 Datasheet(PDF) 3 Page - Gainsil Semiconductor Technology Co., Ltd |
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GS8331 Datasheet(HTML) 3 Page - Gainsil Semiconductor Technology Co., Ltd |
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3 / 16 page ![]() GS8331/8332/8334 V1 3/16 Electrical Characteristics (At Vs=5V, TA = +25℃, VCM = VS/2, RL = 10K Ω, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT CHARACTERISTICS Input Offset Voltage (VOS) 2 10 μV Input Bias Current (IB) 20 pA Input Offset Current (IOS) 10 pA Common-Mode Rejection Ratio (CMRR) VCM = 0V to 5V 110 dB Large Signal Voltage Gain ( AVO) RL = 10kΩ, VO = 0.3V to 4.7V 145 dB Input Offset Voltage Drift ( ΔVOS/ΔT) 50 nV/℃ OUTPUT CHARACTERISTICS Output Voltage High (VOH) RL = 100kΩ to - VS 4.998 V RL = 10kΩ to - VS 4.994 V Output Voltage Low (VOL) RL = 100kΩ to + VS 5 mV RL = 10kΩ to + VS 20 mV Short Circuit Limit (ISC) RL =10Ω to - VS 20 mA Output Current (IO) 30 mA POWER SUPPLY Power Supply Rejection Ratio (PSRR) VS = 2.5V to 5.5V 115 dB Quiescent Current (IQ) VO = 0V, RL = 0Ω 25 μA DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) G = +100 350 KHz Slew Rate (SR) RL = 10kΩ 0.2 V/ μs NOISE PERFORMANCE Voltage Noise (en p-p) 0Hz to 10Hz 1.1 μVP-P Voltage Noise Density (en) f = 1kHz 70 Hz nV / |
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