M28W640ECT datasheet(23/55 Pages) STMICROELECTRONICS

Part #	M28W640ECT

Description	64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M28W640ECT, M28W640ECB

Table 15. DC Characteristics

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI

Input Leakage Current

0V

≤ VIN ≤ VDDQ

±1

µA

ILO

Output Leakage Current

0V

≤ VOUT ≤VDDQ

±10

µA

IDD

Supply Current (Read)

E = VSS, G = VIH, f = 5MHz

918

mA

IDD1

Supply Current (Stand-by or

Automatic Stand-by)

E = VDDQ ± 0.2V,

RP = VDDQ ± 0.2V

15

50

µA

IDD2

Supply Current

(Reset)

RP = VSS ± 0.2V

15

50

µA

IDD3

Supply Current (Program)

Program in progress

VPP = 12V ± 5%

510

mA

Program in progress

VPP = VDD

10

20

mA

IDD4

Supply Current (Erase)

Erase in progress

VPP = 12V ± 5%

520

mA

Erase in progress

VPP = VDD

10

20

mA

IDD5

Supply Current

(Program/Erase Suspend)

E = VDDQ ± 0.2V,

Erase suspended

15

50

µA

IPP

Program Current

(Read or Stand-by)

VPP > VDD

400

µA

IPP1

Program Current

(Read or Stand-by)

VPP ≤ VDD

15

µA

IPP2

Program Current (Reset)

RP = VSS ± 0.2V

15

µA

IPP3

Program Current (Program)

Program in progress

VPP = 12V ± 5%

110

mA

Program in progress

VPP = VDD

15

µA

IPP4

Program Current (Erase)

Erase in progress

VPP = 12V ± 5%

310

mA

Erase in progress

VPP = VDD

15

µA

VIL

Input Low Voltage

–0.5

0.4

V

VDDQ ≥ 2.7V

–0.5

0.8

V

VIH

Input High Voltage

VDDQ –0.4

VDDQ +0.4

V

VDDQ ≥ 2.7V

0.7 VDDQ

VDDQ +0.4

V

VOL

Output Low Voltage

IOL = 100µA, VDD = VDD min,

VDDQ = VDDQ min

0.1

V

VOH

Output High Voltage

IOH = –100µA, VDD = VDD min,

VDDQ = VDDQ min

VDDQ –0.1

V

VPP1

Program Voltage (Program or

Erase operations)

1.65

3.6

V

VPPH

Program Voltage

(Program or Erase

operations)

11.4

12.6

V

VPPLK

Program Voltage

(Program and Erase lock-out)

1V

VLKO

VDD Supply Voltage (Program

and Erase lock-out)

2V

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