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SD103CWS Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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SD103CWS Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page ![]() BL Galaxy Electrical Production specification Schottky Barrier Diode SD103AWS/SD103BWS/SD103CWS Document number: BL/SSSKB025 www.galaxycn.com Rev.A 2 Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage SD103AWS SD103BWS SD103CWS V(BR)R 40 30 20 V IR=10 μA IR=10 μA IR=10 μA Forward voltage VF 0.37 0.60 V IF=20mA IF=200mA Reverse current SD103AWS SD103BWS SD103CWS IRM 5.0 μA VR=30V VR=20V VR=10V Capacitance between terminals CT 50 pF VR=0,f=1MHz Reverse Recovery Time trr 10 ns IR=IF=200mA Irr=0.1*IR,RL=100 Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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