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IRF620 Datasheet(PDF) 3 Page - STMicroelectronics |
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IRF620 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr td(off) tf Turn-on Time Rise Time Turn-off Delay Time Fall Time VDD =100 V ID =3 A RG =50 Ω VGS =10 V (see test circuit) 30 70 135 45 45 100 190 65 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge ID =6 A VGS =10 V VDD = Max Rating x 0.8 (see test circuit) 20 6 8 30 nC nC nC SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 6 24 A A VSD ( ∗) Forward On Volt age ISD =6 A VGS =0 1.5 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ISD =6 A di/ dt =100 A/ µs VDD = 100 V Tj = 150 oC 170 1 ns µC ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 IRF620/FI 3/9 |
Similar Part No. - IRF620 |
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Similar Description - IRF620 |
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