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IRF620 Datasheet(PDF) 1 Page - STMicroelectronics

Part # IRF620
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF620 Datasheet(HTML) 1 Page - STMicroelectronics

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IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
s
TYPICAL RDS(on) = 0.55
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
INDUSTRIAL ACTUATORS
s
DC-DC
&
DC-AC
CONVERTERS
FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
November 1996
TYPE
VDSS
R DS(on)
ID
IRF620
IRF620FI
200 V
200 V
<0. 8
Ω
<0. 8
Ω
6A
4A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IRF620
I RF620FI
VDS
Drain-source Voltage (VGS =0)
200
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)200
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont .) at Tc =25
oC6
4
A
ID
Drain Current (cont .) at Tc =100
oC4
2
A
IDM(
•)
Drain Current (pulsed)
24
24
A
Ptot
Total Dissipation at Tc =25
oC70
30
W
Derating Factor
0. 56
0. 24
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/9


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