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IS25LP256D-RJLE-TY Datasheet(PDF) 83 Page - Integrated Silicon Solution, Inc

Part # IS25LP256D-RJLE-TY
Description  SERIAL FLASH MEMORY WITH 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  179 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LP256D-RJLE-TY Datasheet(HTML) 83 Page - Integrated Silicon Solution, Inc

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IS25LP256D
IS25WP256D
Integrated Silicon Solution, Inc.- www.issi.com
83
Rev A15
08/05/2024
8.13 SECTOR ERASE OPERATION (SER, D7h/20h or 4SER, 21h)
A Sector Erase (SER/4SER) instruction erases a 4 Kbyte sector before the execution of a SER/4SER instruction,
the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically
reset after the completion of Sector Erase operation.
• D7h/20h (EXTADD=0) is followed by a 3-byte address (A23-A0) or
• D7h/20h (EXTADD=1) is followed by a 4-byte address (A31-A0) or
• 21h is followed by a 4-byte address (A31-A0)
A SER/4SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire
instruction sequence The SER/4SER instruction code, and three or four address bytes as above are input via SI.
Erase operation will start immediately after CE# is pulled high. The internal control logic automatically handles the
erase voltage and timing.
The progress or completion of the erase operation can be determined by reading the WIP bit. If the WIP bit is “1”,
the erase operation is still in progres
s. If the WIP bit is “0”, the erase operation has been completed.
Figure 8.27 Sector Erase Sequence (D7h/20h [EXTADD=0], 3-byte address)
Instruction = D7h/20h
23
CE #
SCK
SI
3
2
SO
1
0
3-byte Address
High Impedance
22
21
...
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
Mode 3
Mode 0



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