TLE2061MD datasheet(45/78 Pages) TI

45 / 78 page

TLE206x, TLE206xA, TLE206xB

EXCALIBUR JFET INPUT HIGHOUTPUT DRIVE

µPOWER OPERATIONAL AMPLIFIERS

SLOS193B − FEBRUARY 1997 − REVISED MAY 2004

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

Figure 1. Slew-Rate Test Circuit

(see Note A)

VCC −

−

VCC +

NOTE A: CL includes fixture capacitance.

Figure 2. Noise-Voltage Test Circuit

2 k

Ω

VCC −

VCC +

−

(see Note A)

10 k

Ω

100

Ω

VCC −

VCC +

−

NOTE A: CL includes fixture capacitance.

Figure 3. Unity-Gain Bandwidth and Phase-Margin Test Circuit

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

input bias and offset current

At the picoampere bias current level typical of the TLE206x, TLE2064xA, and TLE206xB, accurate

measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter,

but test socket leakages can easily exceed the actual device bias currents. To accurately measure these small

currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters

with bias voltages applied but with no device in the socket. The device is then inserted into the socket and a

second test that measures both the socket leakage and the device input bias current is performed. The two

measurements are then subtracted algebraically to determine the bias current of the device.

TLE2061MD Datasheet(PDF) 45 Page - Texas Instruments