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DP9502AB Datasheet(PDF) 4 Page - Shenzhen Developer Microelectronics Co., Ltd

Part # DP9502AB
Description  Non-Isolated, Step-Down Quasi-Resonant LED Power Switch
PDF  10 Pages
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Manufacturer  DEPUW [Shenzhen Developer Microelectronics Co., Ltd]
Direct Link  http://depuw.com/en/
Logo DEPUW - Shenzhen Developer Microelectronics Co., Ltd

DP9502AB Datasheet(HTML) 4 Page - Shenzhen Developer Microelectronics Co., Ltd

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Peng Jijun
13326967551 translated to English by Yevhen Stadnik 380972333363
4
DP950XB
Non-Isolated, Step-Down Quasi-Resonant LED Power Switch
Limit parameters (Note 1)
Parameter
Value
Unit
Drain Voltage
-0.3 to 500
V
HVDD Voltage
-0.3 to 650
V
CS,ROVP Voltage
-0.3 to 7
V
PDmax，
power dissipation @TA=50oC(SOP-7)
（Note 2）
0.6
W
ƟJA
Body thermal resistance - junction to ambient (SOP-7)
165
℃
/W
PDmax，
power dissipation @TA=50oC(DIP-7)
（Note 2）
0.9
W
ƟJA
Body thermal resistance - junction to ambient (DIP-7)
105
oC/W
Chip operating junction temperature
150
°C
Storage temperature
-65 to 150
°C
Solder temperature (soldering 10 seconds)
260
°C
ESD capabilitry (Electrostatic Discharge, release of stored static electricity)
3
kV
Recommended operating conditions
Parameter
Value
Unit
Operating Junction Temperature
-40 to 125
°C
Electrical parameters (ambient temperature is 25 ℃ unless otherwise specified)
Parameter
Description
Test conditions
Min.
Typ.
Max.
Unit
Power supply part (HVDD pin)
IVDD_st
Starting current
VDD<VDD_Op
300
700
uA
IVDD_Op
Working current
Fsw=7KHz
80
150
300
uA
HVDD_ON
HVDD Start voltage
10
11.5
13
V
HVDD_OFF
HVDD Shutdown voltage
5.8
6.6
7.5
V
Toff_min
Minimum shutdown time
(Note 3)
0.6
1.0
1.4
us
Ton_max
Maximum start time
(Note 3)
50
us
Toff_max
Maximum shutdown time
195
270
350
us
Current sampling part (CS pin)
TLEB
Current sampling leading
edge blanking time
(Note 3)
300
500
700
ns



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