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SCS212AM Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SCS212AM Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISCD7032 eq SCS212AM Silicon Carbide Schottky Diode www.iscsemi.com 1 FEATURES · Reduced Temperature Dependence · High-speed Switching Possible · Shorter Recovery Time APPLICATIONS · PFC Boost Topology · Data Center · Secondary Side Rectification ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitisve Peak Reverse Voltage 650 V IF Continuous Forward Current Tc= 75°C 12 A IFSM Non-Repetitive Forward Surge Current TVJ= 25°C,tp=10ms, Sinusoidal 43 A TVJ= 150°C,tp=10ms, Sinusoidal 34 IFRM Repetitive Peak Forward Surge Current 32 A I2t I2t For Fusing TVJ= 25°C,tp=10ms 9.2 A2S TVJ= 150°C,tp=10ms 5.7 Ptot Power Dissipation Tc=25°C 37 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ |
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