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28C04A/P Datasheet(PDF) 1 Page - Microchip Technology

Part # 28C04A/P
Description  4K (512 x 8) CMOS EEPROM
PDF  10 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

28C04A/P Datasheet(HTML) 1 Page - Microchip Technology

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 2004 Microchip Technology Inc.
DS11126H-page 1
FEATURES
• Fast Read Access Time—150 ns
• CMOS Technology for Low Power Dissipation
- 30 mA Active
- 100
µA Standby
• Fast Byte Write Time—200
µs or 1 ms
• Data Retention >200 years
• Endurance - Minimum 104 Erase/Write Cycles
- Automatic Write Operation
- Internal Control Timer
- Auto-Clear Before Write Operation
- On-Chip Address and Data Latches
•Data Polling
• Chip Clear Operation
• Enhanced Data Protection
-VCC Detector
- Pulse Filter
- Write Inhibit
• 5-Volt-Only Operation
• Organized 512x8 JEDEC standard pinout
- 24-pin Dual-In-Line Package
- 32-pin PLCC Package
• Available for Extended Temperature Ranges:
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
DESCRIPTION
The Microchip Technology Inc. 28C04A is a CMOS 4K
non-volatile electrically Erasable and Programmable
Read Only Memory (EEPROM). The 28C04A is
accessed like a static RAM for the read or write cycles
without the need of external components. During a
“byte write”, the address and data are latched inter-
nally, freeing the microprocessor address and data bus
for other operations. Following the initiation of write
cycle, the device will go to a busy state and automati-
cally clear and write the latched data using an internal
control timer. To determine when a write cycle is com-
plete, the 28C04A uses Data polling. Data polling
allows the user to read the location last written to when
the write operation is complete. CMOS design and pro-
cessing enables this part to be used in systems where
reduced
power
consumption
and
reliability
are
required. A complete family of packages is offered to
provide the utmost flexibility in applications.
PACKAGE TYPES
BLOCK DIAGRAM
• 1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
Vcc
A8
NC
WE
OE
NC
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SS
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
NC
NC
NC
OE
NC
CE
I/O7
I/O6
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
DIP
PLCC
• Pin 1 indicator on PLCC on top of package
I/O0
I/O7
Input/Output
Buffers
Chip Enable/
Output Enable
Control Logic
CE
OE
Data Protection
Circuitry
A8
Y Gating
4K bit
Cell Matrix
X
Decoder
Y
Decoder
A0
Data
Poll
Auto Erase/Write
Timing
VCC
VSS
WE
L
a
t
c
h
e
s
Program Voltage
Generation
28C04A
4K (512 x 8) CMOS EEPROM
Obsolete Device


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