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NCE035P40GU Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE035P40GU Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 6 page ![]() Wuxi NCE Power Co., Ltd Page V1.0 2 NCE035P40GU http://www.ncepower.com Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -40 - - V Zero Gate Voltage Drain Current IDSS VDS=-40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.2 -1.8 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-20A - 2.8 3.5 mΩ VGS=-4.5V, ID=-20A - 4.6 6.0 Forward Transconductance gFS VDS=-5V,ID=-20A - 65 - S Dynamic Characteristics (Note4) Input Capacitance Clss VDS=-20V,VGS=0V, F=1.0MHz - 7756 - PF Output Capacitance Coss - 705 - PF Reverse Transfer Capacitance Crss - 536 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) VDD=-20V, RGEN=3Ω VGS=-10V,RL=0.5Ω - 12 - nS Turn-on Rise Time tr - 25 - nS Turn-Off Delay Time td(off) - 310 - nS Turn-Off Fall Time tf - 170 - nS Total Gate Charge Qg VDS=-20V,ID=-20A, VGS=-10V - 158 - nC Gate-Source Charge Qgs - 34 - nC Gate-Drain Charge Qgd - 32 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-20A - - -1.2 V Diode Forward Current (Note 2) IS - - -130 A Reverse Recovery Time trr TJ = 25°C, IF = -20A di/dt = 100A/μs(Note3) - 130 - nS Reverse Recovery Charge Qrr - 220 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=-20V,VG=-10V,L=0.5mH,Rg=25Ω |
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