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NCE035P40GU Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Part # NCE035P40GU
Description  NCE P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE035P40GU Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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NCE035P40GU
http://www.ncepower.com
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-40V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.2
-1.8
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-20A
-
2.8
3.5
VGS=-4.5V, ID=-20A
-
4.6
6.0
Forward Transconductance
gFS
VDS=-5V,ID=-20A
-
65
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
VDS=-20V,VGS=0V,
F=1.0MHz
-
7756
-
PF
Output Capacitance
Coss
-
705
-
PF
Reverse Transfer Capacitance
Crss
-
536
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
VDD=-20V, RGEN=3Ω
VGS=-10V,RL=0.5Ω
-
12
-
nS
Turn-on Rise Time
tr
-
25
-
nS
Turn-Off Delay Time
td(off)
-
310
-
nS
Turn-Off Fall Time
tf
-
170
-
nS
Total Gate Charge
Qg
VDS=-20V,ID=-20A,
VGS=-10V
-
158
-
nC
Gate-Source Charge
Qgs
-
34
-
nC
Gate-Drain Charge
Qgd
-
32
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-20A
-
-
-1.2
V
Diode Forward Current (Note 2)
IS
-
-
-130
A
Reverse Recovery Time
trr
TJ = 25°C, IF = -20A
di/dt = 100A/μs(Note3)
-
130
-
nS
Reverse Recovery Charge
Qrr
-
220
-
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=-20V,VG=-10V,L=0.5mH,Rg=25Ω



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