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MPC8555VTAPF Datasheet(PDF) 18 Page - Freescale Semiconductor, Inc |
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MPC8555VTAPF Datasheet(HTML) 18 Page - Freescale Semiconductor, Inc |
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18 / 88 page ![]() MPC8555E PowerQUICC™ III Integrated Communications Processor Hardware Specifications, Rev. 4 18 Freescale Semiconductor DDR SDRAM 6.2 DDR SDRAM AC Electrical Characteristics This section provides the AC electrical characteristics for the DDR SDRAM interface. 6.2.1 DDR SDRAM Input AC Timing Specifications Table 13 provides the input AC timing specifications for the DDR SDRAM interface. 6.2.2 DDR SDRAM Output AC Timing Specifications Table 14 and Table 15 provide the output AC timing specifications and measurement conditions for the DDR SDRAM interface. Table 13. DDR SDRAM Input AC Timing Specifications At recommended operating conditions with GVDD of 2.5 V ± 5%. Parameter Symbol Min Max Unit Notes AC input low voltage VIL —MVREF – 0.31 V AC input high voltage VIH MVREF + 0.31 GVDD + 0.3 V MDQS—MDQ/MECC input skew per byte For DDR = 333 MHz For DDR < 266 MHz tDISKEW — 750 1125 ps 1 Note: 1. Maximum possible skew between a data strobe (MDQS[n]) and any corresponding bit of data (MDQ[8n + {0...7}] if 0 <= n <= 7) or ECC (MECC[{0...7}] if n = 8). Table 14. DDR SDRAM Output AC Timing Specifications for Source Synchronous Mode At recommended operating conditions with GVDD of 2.5 V ± 5%. Parameter Symbol 1 Min Max Unit Notes MCK[n] cycle time, (MCK[n]/MCK[n] crossing) tMCK 610 ns 2 Skew between any MCK to ADDR/CMD 333 MHz 266 MHz 200 MHz tAOSKEW -1000 -1100 -1200 200 300 400 ps 3 ADDR/CMD output setup with respect to MCK 333 MHz 266 MHz 200 MHz tDDKHAS 2.8 3.45 4.6 —ns 4 ADDR/CMD output hold with respect to MCK 333 MHz 266 MHz 200 MHz tDDKHAX 2.0 2.65 3.8 —ns 4 MCS(n) output setup with respect to MCK 333 MHz 266 MHz 200 MHz tDDKHCS 2.8 3.45 4.6 —ns 4 |
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